Hall effect

基本解釋

One of these is that if it is placed in a magnetic field it exhibits a phenomenon known as the relativistic quantum Hall effect.
其一是，放在磁場(chǎng)中，它就會(huì)產(chǎn)生著名的相對(duì)論量子霍爾效應(yīng)。這（為你的分析家發(fā)危險(xiǎn)工作津貼）意味著準(zhǔn)粒子存在于磁化的石墨烯中。
Physical phenomena driven by topological properties, such as the quantum Hall effect, have the appealing feature that they are robust with respect to external perturbations.
由拓?fù)湫再|(zhì)驅(qū)動(dòng)的物理現(xiàn)象, 例如, 量子霍爾效應(yīng), 具有非常吸引人的性質(zhì): 即抗外界微擾的健壯性.
Its thinness, too, gives it unusual electrical properties.One of these is that if it is placed in a magnetic field it exhibits a phenomenon known as the relativistic quantum Hall effect.
它很薄，這也賦予了它不同尋常的電學(xué)性能，如置于磁場(chǎng)中它會(huì)表現(xiàn)出相對(duì)量子霍爾效應(yīng)。

One of these is that if it is placed in a magnetic field it exhibits a phenomenon known as the relativistic quantum Hall effect.
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From that, through a complicated and rather tiresome procedure involving phenomena known as the Josephson effect and the quantum Hall effect, it is possible to express electrical power in terms of h—and so, to calculate h in terms of the balanced mass.
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In spite of such confusion, Mr Hall argues that options undoubtedly have an incentive effect.
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the production of a potential difference across a conductor carrying an electric current when a magnetic field is applied in a direction perpendicular to that of the current flow

霍耳效應(yīng)
The Hall Effect measurements indicated that all the films were n-type semiconductors.
霍耳效應(yīng)檢測(cè)表明所有樣品均是n型導(dǎo)電。
電子、通信與自動(dòng)控制技術(shù)
霍爾效應(yīng)
The nanometer thin film is paid great attention now. Compared with the common thin film, it has some unique properties such as huge conductance, huge magnetism resistance effect, huge Hall effect and so on.
納米薄膜具有其獨(dú)特的結(jié)構(gòu)特征和性能,如巨電導(dǎo)、巨磁電阻效應(yīng)、巨霍爾效應(yīng)等,正受到人們的廣泛關(guān)注。
霍耳效應(yīng)
For the SiCGe samples grown with a B_2H_6 flow rate in a range of 0.2 to 1 sccm,they were identify as p type by the hot probe method and Hall effect measurement,and their doping concentrations were about 10~(20)cm~(-3).4.
在B_2H_6流量為0.1～0.5sccm時(shí),熱探針法和霍耳效應(yīng)測(cè)試出生長(zhǎng)SiCGe薄膜為p型,其摻雜濃度約在10~(20)cm~(-3)左右。
hall效應(yīng)
郝耳效應(yīng)