High-k

基本解釋

High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
使用高真空電子束蒸發(fā)在p型Si(1 0 0 )襯底上制備了高kHfO2 薄膜 .
The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps.
分兩步提取了HfO2高k柵介質(zhì)等效氧化層厚度(EOT).
A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed.
提出了預制厚鋼板焊縫斷裂韌度試樣疲勞裂紋的“高K比法”。
Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel.
英特爾的新設計使用的是大家所知道的“高K金屬門”技術。但是，IBM公司也在同一天作了類似的宣布。
NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.
在閘極與高介電常數(shù)介電層間使用氮化矽可有效抑制負偏壓溫度不穩(wěn)定性的現(xiàn)象。