MMIC

基本解釋

This paper presented a MEMS microwave power sensor fabricated in GaAs MMIC technology.
提出了一種基于GaAs MMIC工藝的MEMS微波功率傳感器。
The devised HFET devices in this dissertation can be promisingly applied to MMIC applications.
此篇論文所研制的異質(zhì)結(jié)構(gòu)電晶體對(duì)于應(yīng)用在MMIC的應(yīng)用上是具有潛力的元件。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
報(bào)道了利用離子注入技術(shù)研制出一種用于手機(jī)的超低插損砷化鎵單片射頻單刀雙擲開(kāi)關(guān)。
The MMIC balun double balanced mixer has a high dynamic range and a wideband operation.
另外 ,單片巴侖雙平衡混頻器具有高的動(dòng)態(tài)范圍和寬頻段工作特點(diǎn)。
The measured output power of the MMIC VCO is 7.3dBm,the phase noise is-101dBc/Hz@1MHz at 28.46GHz,and the tuning range is 27.5~30.4GHz.
實(shí)測(cè)性能指標(biāo)為:在28.;46GHz;該壓控振蕩器的輸出功率為7