Sagmes

基本解釋

Optimum designing the device structure, strictlv controlling the parameters of LPE growthand perfect fabricating processing of devices, the In GaAs/InP SAGM APDs with low dark currentand high multiplication factor have been obtainecl.
根據(jù)器件結(jié)構(gòu)的優(yōu)化設(shè)計(jì),嚴(yán)格控制生長(zhǎng)參數(shù)以及理想的器件制備工藝獲得了低漏電高增益InGaAs/InP SAGM雪崩光電二極管。
Research on LPE Growth for InGaAs/InP SAGM--APD
InGaAs/InP-SAGM-APD結(jié)構(gòu)的液相外延生長(zhǎng)研究
Low Dark Current High Gain InGaAs/Inp SAGM APD
低漏電高增益InGaAs/InP SAGM雪崩光電二極管
Single Photon Detection Technique in Infrared Communication Wavelengths with SAGM APD
紅外通信波段SAGM APD單光子探測(cè)應(yīng)用技術(shù)研究
SAGM
(=sodium chloride, adenine, glucose, mannitol) 氯化鈉、腺膘呤、葡萄糖、甘露醇