annealing activation

基本解釋

For the whole process of homogenizing annealing, the leading factor for the change of Al-alloy-anode's activation properties is the change of crystal defects.
整個(gè)退火過(guò)程中，晶體缺陷的變化對(duì)鋁合金陽(yáng)極活性改變影響最大。
The activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices were calculated by annealing model.
根據(jù)退火模型計(jì)算了CMOS器件輻照后25、100℃等溫和25~250℃等時(shí)退火過(guò)程中激發(fā)能的分布。
The mechanism of elementary redistrib utionand annealing embrittlement during relaxation Was discussed on the viewpoint ofthe activation energy of atomic diffusion in Ni-P amorphous being variables.
本文從非晶中原子擴(kuò)散激活能可變化的觀點(diǎn)出發(fā)，對(duì)弛豫過(guò)程中元素再分布和脆化機(jī)制進(jìn)行了討論。