carrier recombination

基本解釋

The optimization and qualification of ingots and bricks using carrier recombination and resistivity measurements.
利用載子合復(fù)壽命及電阻率量測針對硅錠，硅塊進(jìn)行合格檢驗(yàn)及優(yōu)化分析。
Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor.
禁帶寬度和少子復(fù)合壽命是硅晶體管發(fā)射區(qū)中重要的物理參數(shù)。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
確定了低溫下非平衡載流子復(fù)合率及擴(kuò)散速度的降低，是導(dǎo)致SRAM斷電后數(shù)據(jù)殘留的主要原因。