field-effect transistor

基本解釋

VDMOS power field-effect transistor is abroad 1980s with the rapid development of a new power devices.
VDMOS功率場(chǎng)效應(yīng)晶體管是國外80年代迅速發(fā)展起來的一種新型功率器件。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便調(diào)節(jié)劑能形成一個(gè)射極跟隨晶體管發(fā)射極地區(qū)，其連接到來源或流失的場(chǎng)效應(yīng)晶體管。
Field-Effect Transistor Memory This patent was issued to IBM inventor Robert Dennard June 4, 1968, for inventing a one-transistor dynamic RAM cell, which became the standard for computer memory.
該專利由IBM發(fā)明者Robert Dennard于1968年6月4日發(fā)布，一個(gè)有關(guān)晶體管動(dòng)態(tài)RAM單元的發(fā)明，它成為了計(jì)算機(jī)內(nèi)存的標(biāo)準(zhǔn)。

Besides which, the field-effect transistor camp has plenty of fight left.
ECONOMIST: The transistor’s heir

a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate ( abbr: FET)&rarrsee alsoJFET ,IGFET

場(chǎng)效應(yīng)晶體管
To improve FET performance, the novel 4H-SiC metal-oxide-semiconductor field-effect transistor with implanted n-type layers near SiO2/SiC interface (4H-SiC BC-MOSFET) is presented in this paper.
為了提高場(chǎng)效應(yīng)晶體管特性，本文介紹了一種新型結(jié)構(gòu)的器件，簡稱4H-SiC埋溝MOSFET，就是在SiO2／SiC界面注入一層N型埋溝層。
場(chǎng)效應(yīng)管
The Field-effect transistor (FET) resistive mixers are attractive for application because of the advantages of very low distortion and low noise.
場(chǎng)效應(yīng)管(FET)阻性混頻器,因具有失真小,噪聲低等優(yōu)點(diǎn),而表現(xiàn)出誘人的應(yīng)用前景。
場(chǎng)效電晶體