impurity defect

基本解釋

To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
結(jié)構(gòu)缺陷和雜質(zhì)含量較小的金剛石膜具有較高的電阻率。
QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage, lower defect and impurity density.
氣源MBE在較低溫度下生長(zhǎng)的量子點(diǎn)材料具有較高的量子點(diǎn)覆蓋度。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以將純凈放射性核束注入到樣品中去，使得其在固態(tài)物理特別是涉及到半導(dǎo)體中的雜質(zhì)和缺陷問(wèn)題的應(yīng)用成為可能。