silicon substrate loss

基本解釋

Using thick porous silicon layers can reduce the high frequency loss in Si substrate.
采用多孔硅厚膜作為隔離層，能夠極大地降低襯底高頻損耗。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
這些Q值受到導(dǎo)體電阻和硅襯底的渦流損耗的限制。
In order to reduce substrate loss and improve inductors' Q factor (Quality Factor), a novel insulation method, forming thick OPS layer on the low resistivity silicon (LRS) substrate, is proposed.
提出了一種在低阻硅襯底上形成氧化多孔硅厚膜來隔離硅襯底損耗的硅基平面電感結(jié)構(gòu)；