AlGaInP

常見(jiàn)例句

• Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
  引用該論文 陳貴楚;范廣涵;陳練輝;劉魯.
• For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
  對(duì)紅色發(fā)光二極體(LED)而言，由于晶格常數(shù)之要求，通常將發(fā)光材料磷化鋁銦鎵成長(zhǎng)于砷化鎵基板上。
• Application of wafer bonding in AlGaInP high brightness LED devices
  晶片鍵合在AlGaInP發(fā)光二極管中的應(yīng)用
• A novel AlGaInP thin-film light emitting diode with Omni directional reflector
  新型全方位反射鋁鎵銦磷薄膜發(fā)光二極管
• Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
  紅色AlGaInP激光器的特性及熱特性分析
• 4 Distribution of carrier concentrations of p-GaP and p-AlGaInP in AlGaInP LED structures under differentannealing temperature measured by ECV.
  標(biāo)題： 圖4不同退火溫度下AlGaInP LED外延片中p-GaP和p-AlGaInP的載流子濃度隨深度分布曲線 Fig.
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