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One proposed that the formation mechanism of IrSi/Si Schottky barrier should be correlated with the chemical bonds between IrSi and Si atoms at interface. 提出了IrSi/Si肖特基勢(shì)壘形成機(jī)理與界麪処IrSi和Si原子的化學(xué)鍵密切相關(guān)。