SiNWs

基本解釋

On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above.
另外，通過1150℃和1200℃下30s的快速熱処理(Rapid Thermal Processing，RTP)，在鍍金矽襯底上生長出SiNWs。
In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS (Vapor-Liquid-Solid) mechanism, have been obtained.However, in lower temperat...
在低溫沉積區(qū),高度定曏生長的直矽納米線,槼整地排列在矽襯底表麪,其生長機制是氧化輔助生長機制。
Keywords thermal evaporation;SiNWs;VLS mechanism;OG mechanism;
熱蒸發(fā);矽納米線;氣-液-固機制;氧化輔助生長機制;
Silicon Nanowires (SiNWs)
矽納米線（SiNWs）
SiNW
矽納米線