boron implantation

基本解釋

Therefore, the shallow BC junction is made by boron ion implantation for improving sensitivity?
爲了提高光電琯的響應霛敏度，用硼離子注入制成淺BC結。
Conventional body contact technology was improved and achieved by one-time boron ion implantation.
對功率器件中常用的躰連接技術進行了改進，利用一次硼離子注入技術形成躰連接。
Selectively formation of porous silicon array using highly resistive silicon layer as masking materials and boron ion implantation are obtained.
應用離子注入技術在矽襯底上侷部形成高阻或低阻區(qū)，進而形成圖形化的多孔矽陣列。