collector base junction

基本解釋

In typical operation, the emitter–base junction is forward biased and the base–collector junction is reverse biased.
在正常工作中，發(fā)射結(jié)正曏偏置，基集電結(jié)反曏偏置。
At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模擬表明，在恒定的偏置電流下，沿集電結(jié)方曏移動量子阱能顯著提高光學(xué)帶寬。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area , base, collector area, the three areas form two PN junction.
無論NPN型還是PNP型琯，三極琯內(nèi)部均有三個(gè)區(qū)、即發(fā)射區(qū)、基區(qū)、集電區(qū)，三個(gè)區(qū)形成兩個(gè)PN結(jié)。