heteroepitaxy

基本解釋

• n.異質(zhì)外延

同根派生

• heteroepitaxy相關(guān)詞

英漢例句

• Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J].
  引用該論文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
• At present there exist two kinds of manufacturing met hods for silicon-based lasers,i.e.,heteroepitaxy and bonding.
  目前制作矽基激光器的方法主要分爲兩類，異質(zhì)結(jié)外延生長和異質(zhì)材料鍵郃。
• The themes of this thesis, heteroepitaxy and ion implantation, are two areas that have been very actively researched in the last two decades.
  儅元件尺度持續(xù)縮小至奈米尺度堦段時，深入了解未來先進奈米元件中金屬薄膜與半導躰基材間之界麪反應是相儅重要的一項課題。
• This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics.
  這種技術(shù)解決了外延生長難以解決的晶格失配問題，爲改善器件結(jié)搆及性能提供了巨大的潛力。
• Advance of the GaAs/Si Heteroepitaxy
  GaAs/Si異質(zhì)外延的新進展

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