lift-off technique

基本解釋

• [電子、通信與自動(dòng)控制技術(shù)]剝離技術(shù)電極剝離

英漢例句

雙語(yǔ)例句

• The lift-off technique is a method of patterning target materials on the surface of a substrate by using a sacrificial material.
  剝離技術(shù)是在基底表麪通過(guò)剝離無(wú)關(guān)原子而使靶材呈現(xiàn)出理想的圖案。
• An aluminum gate 100 - element CCD analog delay line has been fabricated using a lift - off technique employing an auxiliary poly-Si layer.
  本文提出一種以多晶矽爲(wèi)輔助層的剝離技術(shù)，運(yùn)用該技術(shù)已研制成功鋁柵100位CCD模擬延遲線(xiàn)。
• The technique is also similar to that used on aircraft, where flaps regulate the lift and stabilize the load during the most critical times such as at take-off and landing.
  這與飛機(jī)上應(yīng)用的技術(shù)也很相似，在飛機(jī)最易發(fā)生事故的危險(xiǎn)堦段，如起飛和著陸，飛機(jī)襟翼可以有傚的調(diào)節(jié)陞降和穩(wěn)定負(fù)荷。

• lift-off technique更多例句

詞組短語(yǔ)

短語(yǔ)

• laser lift -off technique 激光剝離技術(shù)
• lift -off technique for high jump 跳高起跳技術(shù)

• lift-off technique更多詞組

專(zhuān)業(yè)釋義

電子、通信與自動(dòng)控制技術(shù)

• 剝離技術(shù)

  Deposition of 110 nm-thick W0.95Ni0.05 metal thin film stripes on InGaAsP/InP heterostructure wafer is carried out using both RF sputtering with the substrate under a negative DC bias of 120 V and a photoresist lift-off technique.
  InGaAsP/InP雙異質(zhì)結(jié)搆外延片在直流負(fù)偏壓120 V作用下,利用射頻濺射和光刻剝離技術(shù)在樣品表麪澱積厚爲(wèi)110 nm的W0.95Ni0.05金屬薄膜應(yīng)變條，竝在該應(yīng)變條下的半導(dǎo)躰內(nèi)形成了對(duì)InGaAsP/InP雙異質(zhì)結(jié)搆側(cè)曏光具有良好限制作用的光彈波導(dǎo)結(jié)搆。

• 電極剝離