molecular beam epitaxy

基本解釋

The samples were grown on sapphire substrate by plasma-assisted molecular beam epitaxy.
樣品利用分子束外延技術(shù)在藍寶石襯底上生長。
Molecular-beam epitaxy and dynamic growth with long-range space and temporal correlations are analysed using scaling analysis approach.
用直接標(biāo)度分析方法研究了分子束外延生長和在長程時間、空間關(guān)聯(lián)條件下的動力生長過程。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化鎵是增長了等離子躰輔助（111）和分子束外延（001）矽襯底上氮化矽緩沖層使用鉿。