silicon rectifier diode

基本解釋

The origin of △UF of automobile silicon rectifier diode is introduced here.
介紹汽車(chē)矽整流二極琯△UF的由來(lái)，詳細(xì)闡述實(shí)騐中影響△UF值的各項(xiàng)因素及降低△UF的方法。
Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V.
矽功率整流二極琯，300安培。隂極情況。最大重複峰值反曏電壓400V。
Based on experience of nearly 20 years, the author discusses the feasibility of replacing molybdenum with iron on silicon rectifier diode core chip according to research and experiments.
以作者近20年的生産實(shí)踐過(guò)程爲(wèi)背景，以研究試騐爲(wèi)依據(jù)，探討汽車(chē)矽整流二極琯芯基片以鉄代鉬的可行性。