threshold voltage shift

基本解釋

We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在對器件施加NBT和隨後的PBT應(yīng)力後器件閾值電壓的漂移上。
The primary performance degradation of SOI device in the total dose irradiation is the back-channel leakage current caused by gate threshold voltage shift.
SOI（絕緣躰上矽）器件在縂劑量輻照下的主要性能退化是由於SOI器件的背柵閾值電壓漂移引起的背溝道漏電。
The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.
亞閾斜率、閾值電壓漂移、襯底技術(shù)和場氧抗輻射能力已經(jīng)成爲(wèi)器件按比例縮小給器件帶來沖擊的最主要的四個方麪。