drift region

基本解釋

A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一個均勻、階梯和線性摻雜漂移區(qū)SOI高壓器件的統(tǒng)一擊穿模型。
The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance.
研究表明，階梯變摻雜漂移區(qū)結構能明顯改善表面電場分布，提高耐壓，降低導通電阻，增大工藝容差；
The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.
結果表明對于漂移咀規(guī)則的重入腔，采用分區(qū)場匹配的經(jīng)典方法仍有明顯的優(yōu)點，它既可以保證很高的精度，又只需要很少的計算量。