drift region
常見(jiàn)例句
- A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一個(gè)均勻、階梯和線性摻雜漂移區(qū)SOI高壓器件的統(tǒng)一擊穿模型。 - The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance.
研究表明,階梯變摻雜漂移區(qū)結(jié)構(gòu)能明顯改善表面電場(chǎng)分布,提高耐壓,降低導(dǎo)通電阻,增大工藝容差; - The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.
結(jié)果表明對(duì)于漂移咀規(guī)則的重入腔,采用分區(qū)場(chǎng)匹配的經(jīng)典方法仍有明顯的優(yōu)點(diǎn),它既可以保證很高的精度,又只需要很少的計(jì)算量。 返回 drift region