electron emission microscopy

基本解釋

In this paper principle and application of Ballistic Electron Emission Microscopy (BEEM) is described. Some results obtained with home made setup of BEEM are shown.
本文簡(jiǎn)單介紹了彈道電子發(fā)射顯微鏡（BEEM）的原理和應(yīng)用，并給出了用自行研制的BEEM設(shè)備得到的一些實(shí)驗(yàn)結(jié)果。
Two methods used in the microanalysis of semiconductor interfaces, Ballistic Electron Emission Microscopy (BEEM)and Scanning Internal Photoemission Microscopy (SIPM), are described.
介紹了可以在微觀級(jí)對(duì)半導(dǎo)體界面的電學(xué)性質(zhì)進(jìn)行評(píng)價(jià)的兩種新技術(shù)及其應(yīng)用。
The structures of the composite films were characterized by field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR) and thermo gravimetric analysis (TGA).
采用場(chǎng)發(fā)射掃描電鏡（FESEM）、紅外光譜（FTIR）、熱重分析（TGA）等方法對(duì)復(fù)合膜結(jié)構(gòu)進(jìn)行表征。
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field electron emission microscopy 場(chǎng)電子發(fā)射顯微術(shù)
field emission electron microscopy 場(chǎng)發(fā)射掃描電子顯微鏡
emission Electron Microscopy 光發(fā)射電子顯微鏡檢查
photo -emission electron microscopy 發(fā)射電子顯微鏡;光發(fā)射電子顯微鏡檢查;光電發(fā)射電子顯微鏡檢查
Field Emission Scanning Electron Microscopy 場(chǎng)發(fā)射掃描電子顯微鏡;掃描電子顯微分析;式電子顯微鏡;電子顯微鏡