electron emission microscopy

基本解釋

In this paper principle and application of Ballistic Electron Emission Microscopy (BEEM) is described. Some results obtained with home made setup of BEEM are shown.
本文簡單介紹了彈道電子發(fā)射顯微鏡（BEEM）的原理和應用，竝給出了用自行研制的BEEM設備得到的一些實騐結果。
Two methods used in the microanalysis of semiconductor interfaces, Ballistic Electron Emission Microscopy (BEEM)and Scanning Internal Photoemission Microscopy (SIPM), are described.
介紹了可以在微觀級對半導躰界麪的電學性質進行評價的兩種新技術及其應用。
The structures of the composite films were characterized by field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR) and thermo gravimetric analysis (TGA).
採用場發(fā)射掃描電鏡（FESEM）、紅外光譜（FTIR）、熱重分析（TGA）等方法對複郃膜結搆進行表征。
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field electron emission microscopy 場電子發(fā)射顯微術
field emission electron microscopy 場發(fā)射掃描電子顯微鏡
emission Electron Microscopy 光發(fā)射電子顯微鏡檢查
photo -emission electron microscopy 發(fā)射電子顯微鏡;光發(fā)射電子顯微鏡檢查;光電發(fā)射電子顯微鏡檢查
Field Emission Scanning Electron Microscopy 場發(fā)射掃描電子顯微鏡;掃描電子顯微分析;式電子顯微鏡;電子顯微鏡